Product Summary

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. It is featured with low noise and high gain, as well as high power gain. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

Parametrics

Absolute maximum ratings:(1)Collector to Base Voltage, VCBO: 20V; (2)Collector to Emitter Voltage, VCEO: 12V; (3)Emitter to Base Voltage, VEBO: 3.0V; (4)Collector Current, IC: 100mA; (5)Total Power Dissipation, PT: 200mW; (6)Junction Temperature, Tj: 150℃; (7)Storage Temperature, Tstg: -65 to +150℃.

Features

Features:(1) Low Noise and High Gain, NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High Power Gain, MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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2SC3356-T1B R24
2SC3356-T1B R24

Other


Data Sheet

Negotiable 
2SC3356-T1B R25
2SC3356-T1B R25

Other


Data Sheet

Negotiable 
2SC3356-T1B-A R24
2SC3356-T1B-A R24

Other


Data Sheet

Negotiable 
2SC3356-T1B-A R25
2SC3356-T1B-A R25

Other


Data Sheet

Negotiable